Fused Silica Photomask Substrates
AQ Photomask substrates for i-line and KrF excimer laser lithography
QC-i Photomask substrates for ArF excimer laser lithography
  • 193nm Internal transmittance: > 99.7%/cm
  • Resistance to ArF laser irradiation: No damage caused by 0.12mJ/cm2/pulse at 2000Hz, 5x109 pulse. Low birefringence: <1nm/cm @ 193nm
AZ Ultra-low thermal expansion material for EUV mask blanks
Product Information
Fused Silica Photomask Substrates Data
Polishing Surface Flatness
Flatness: Less than 100nm for each side is achievable.
Polishing Defect Status
Defects: Less than 100 counts @ 60nm is achievable