High Purity Silicon Carbide (SiC) for Solar Cells
  • Very high modulus, up to 1350°C
  • AGC SiC will not deflect at high temperatures
  • Excellent CTE (coefficient of thermal expansion) match with silicon wafers
  • Very low thermal stress of PV cell during high temperature processing
  • Extremely long SiC parts lifetime
  • Superior cost-of-ownership compared with other materials
Product Information
High Purity Silicon Carbide Material Data
Material Properties
Material Purity
AGC's CVD-Coated SiC only allows for insignificant levels of trace materials creating highly pure, solid and uniform components.